SOI Substrate 4inch 6inch 8inch Silicon On Insulator Wafer
♦️ High-quality SOI wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SOI Wafer Specification:
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Size: 4inch ;
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Type: P-type;
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Orientation: <100> ;
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Primary Flat Length:32.5mm±2.5 ;
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Dopant: B ;
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SOI Device Thickness: >2um;
-
Device Resistivity: 1-100Ω ;
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Thermal Buried Oxide:1um±5% ;
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Handle Thickness: >400um ;
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Handel Resistivity:1-100Ω;
-
Surface:Single side polished ;
-
Packing: Wafer case ;
Customized specifications can be provided upon request.
Minimum order quantity 10 pieces
Production time 4 to 6 weeks
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♦️ High-quality SOI wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SOI Wafer Specification:
-
Size: 4inch ;
-
Type: P-type;
-
Orientation: <100> ;
-
Primary Flat Length:32.5mm±2.5 ;
-
Dopant: B ;
-
SOI Device Thickness: >2um;
-
Device Resistivity: 1-100Ω ;
-
Thermal Buried Oxide:1um±5% ;
-
Handle Thickness: >400um ;
-
Handel Resistivity:1-100Ω;
-
Surface:Single side polished ;
-
Packing: Wafer case ;
Customized specifications can be provided upon request.
Minimum order quantity 10 pieces
Production time 4 to 6 weeks
♦️ High-quality SOI wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SOI Wafer Specification:
-
Size: 4inch ;
-
Type: P-type;
-
Orientation: <100> ;
-
Primary Flat Length:32.5mm±2.5 ;
-
Dopant: B ;
-
SOI Device Thickness: >2um;
-
Device Resistivity: 1-100Ω ;
-
Thermal Buried Oxide:1um±5% ;
-
Handle Thickness: >400um ;
-
Handel Resistivity:1-100Ω;
-
Surface:Single side polished ;
-
Packing: Wafer case ;
Customized specifications can be provided upon request.
Minimum order quantity 10 pieces
Production time 4 to 6 weeks
♦️ High-quality SOI wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SOI Wafer Specification:
- Size: 4inch ;
- Type: P-type or N-type;
- Orientation: <100> <111> ;
- Primary Flat Length:32.5mm±2.5 ;
- Dopant: B or P ;
- SOI Device Thickness: 2~4um;
- Device Resistivity: 1-100Ω;
- Thermal Buried Oxide:1um±5% or 2um±5% ;
- Handle Thickness: >300um ;
- Handel Resistivity: 1~100Ω;
- Surface: polished ;
- Packing: Wafer case ;
