Samsung Foundry updates process roadmap to move 1.4nm node to 2029 — high-NA EUV will enable 1nm-class and smaller nodes in 2030 and beyond

Samsung Foundry delays its 1.4nm-class SF1.4 process to 2029 and plans High-NA EUV for its 1nm-class node around 2030.
Navitas Semiconductor has announced that first shipments of its U.S.-manufactured 5th Generation GaNFast™ technology Reading Samsung Foundry updates process roadmap to move 1.4nm node to 2029 — high-NA EUV will enable 1nm-class and smaller nodes in 2030 and beyond 2 minutes
12 August 2026 Samsung Foundry has presented an updated fabrication technology roadmap at the 2026 Next-Generation Lithography + Patterning Conference. Compared with its 2024 roadmap, Samsung now plans to move its SF1.4, or 1.4nm-class, process to 2029 while continuing to refine its SF2 family of 2nm-class technologies. The SF2 series includes SF2P, SF2X, SF2A, and SF2Z with backside power delivery. Samsung’s revised schedule indicates a focus on improving yields, production volumes, and commercial competitiveness before moving to its 1nm-class SF1A process around 2030. Samsung also confirmed plans to introduce High-NA EUV lithography for its 1nm-class process. The company has purchased an ASML Twinscan EXE:5000 scanner with 0.55 numerical aperture optics for research, but says the technology still requires further development before mass production. High-NA EUV is expected to become necessary from A10 and smaller nodes onward. The roadmap change reflects the cost and complexity of adopting High-NA EUV, including new photoresists, masks, pellicles, metrology, inspection, and computational lithography requirements. Samsung’s SF1A process is expected to coexist with an enhanced SF1.4+ process using established Low-NA EUV methods. Samsung’s updated roadmap comes as the company works to expand its foundry business, including a long-term agreement to supply Tesla AI5 and AI6 processors through 2033. Source: Tom’s Hardware