Silicon wafer Dry Method Oxide Layer P/N Type Semiconductor Substrate

♦️High-quality silicon wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

Silicon Wafer Specification:

• Size: 4inch;
• Method: CZ;
• Type: P;
• Dopant: B;
• Orientation:100;
• Resistivity: 1~10Ω;
• Thickness: 525um±25;
• Oxide film: 280/300/500nm (both sides);
• TTV＜10um ;
• Surface: polished;
• Backside: etched;
• Packing: silicon wafer case ;