SOKA TECHNOLOGY
Silicon Wafer 8inch P-type 1-100Ω Oxide Layer Semiconductor Substrate
Specification:Oxide Layer 100nm
Quantity:25 Pieces
Quantity:
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Specification:Oxide Layer 100nm
Quantity:25 Pieces
Quantity:
Specification:Oxide Layer 100nm
Quantity:25 Pieces
Quantity:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
- Size: 8inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Orientation:100;
- Resistivity: 1~100Ω;
- Thickness: 725um±25;
- Oxide film: 100nm (both sides);
- Surface: polished;
- Backside: etched;
- Packing: silicon wafer case;
