Silicon wafer 6inch P Type(100) Oxide Layer 300nm Semiconductor Substrate - Soka Technology
Silicon wafer 4inch N Type 10~20Ω Oxide Layer Semiconductor Substrate - Soka Technology

SOKA TECHNOLOGY

Silicon wafer 6inch P/N Type(100) 1~100Ω Oxide Layer Semiconductor Substrate

$63.00
Specification:P(100) 625um Oxide Layer 300nm
Quantity:1 Piece
Quantity:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 6inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation: 100;
  • Resistivity: 1~10Ω·cm;
  • Thickness: 625um±25;
  • Oxide layer: 300 (both sides);
  • TTV＜15um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case；