SOKA TECHNOLOGY
Silicon wafer 2inch P/N Type(100) 0.001~0.009Ω Oxide Layer Semiconductor Substrate
Specification:P(100) 525um Oxide Layer 100nm
Quantity:1 Piece
Quantity:
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Specification:P(100) 525um Oxide Layer 100nm
Quantity:1 Piece
Quantity:
Specification:P(100) 525um Oxide Layer 100nm
Quantity:1 Piece
Quantity:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
- Size: 2inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Orientation:100;
- Resistivity: 0.001~0.009Ω;
- Thickness: 500um±25;
- Oxide layer: 280nm /300nm(both sides);
- TTV<10um ;
- Surface: polished;
- Backside: etched;
- Packing: silicon wafer case;
