Silicon Nitride Thermal Substrate with Copper Cladding IGBT SiN Heat Sink

♦️ High-quality silicon nitride conductive substrate for IGBT etc.

♦️ Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

Copper-clad Si3N4 Substrate Specification:

• Size: 114×114×0.32mm / 190×138×0.32mm ;

• Thermal conductivity (25 ℃):  ≥85 W/(m•k);

• Copper Layer: 0.5mm(Both Side);

• Surface roughness: ≤1Ra ;

• Bulk density: 3.20 ± 0.05 g/cm3 ;

• Modulus of elasticity: 300～320 Gpa ;

• Poisson's ratio: ≤0.29;

• Vickers hardness: ≥14.2 Gpa ;

• Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0～3.2(10-6/℃);
  

• Fracture toughness: 6.0～7.0 MPa;

• Bending strength (three-point bending): 700～800 MPa;

• Production time: 3 weeks

Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.