Three greenish-yellow spheres of varying sizes arranged in a triangular formation on a white background.
Silicon carbide substrate wafer placed in a clear containing, showcasing its high-quality finish for research applications.

SOKA TECHNOLOGY

Silicon Carbide Substrate 8inch 4H Semi-insulating Dummy Grade SiC Wafer IGBT

$2,882.00
Grade:Dummy Grade
Quantity:2 Pieces
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 8inch;
  • Diameter: 200mm±0.2;
  • Thickness: 500um±25;
  • Surface Orientation: <0001>;
  • Notch orientation:[1-100]±5°;
  • Notch Depth:1~1.5mm;
  • Micropipe: ≤50/cm2;
  • Resistivity: 70% area>1E5Ω;
  • LTV:<15um(10*10mm)
  • TTV≤20um;
  • Warp≤70um;
  • Bow≤-65um~65um;
  • Poly Type: <30% Cumulative ares; 
  • Cracks: None;
  • Roughness: None;
  • Edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;