Three greenish-yellow spheres of varying sizes arranged in a triangular formation on a white background.
Silicon carbide substrate wafer placed in a clear containing, showcasing its high-quality finish for research applications.

SOKA TECHNOLOGY

Silicon Carbide Substrate 8inch N Type Production/Dummy Grade 4H SiC Wafer IGBT

$3,088.00
Grade:P-mos Grade
Thickness:350um
Quantity:2 Pieces
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 8inch;
  • Diameter: 200mm±0.2;
  • Thickness: 500um±25;
  • Surface Orientation: 4 toward [11-20]±0.5°;
  • Notch orientation:[1-100]±1°；
  • Notch depth: 1±0.25mm；
  • Micropipe: <5cm2;
  • Hex Plates: area≤5%;
  • Resistivity: 0.014~0.028Ω;
  • EPD: N/A;
  • TED: N/A;
  • BPD: N/A;
  • TSD: N/A;
  • SF:    N/A;
  • TTV≤15um；
  • Warp≤60um；
  • Bow≤40um；
  • Poly areas: ≤5%;
  • Chips/Indents: Qty:2≤1mm Width and Depth;
  • Scratch: Cumulative Length≤1.5 Wafer Diameter;
  • Stain: None;
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;
The difference between NG-grade products and Dummy-grade products lies mainly in the polycrystalline area on the surface.
NG-grade polycrystalline area is generally >5%
NG products are mainly used for equipment testing and have better cost performance