Silicon carbide substrate wafer placed in a clear containing, showcasing its high-quality finish for research applications.

SOKA TECHNOLOGY

Silicon Carbide EPI Substrate 6inch Production Grade SiC Wafer IGBT

$1,908.00
Quantity:1 Piece
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.5;
  • Thickness: 350 um±25;
  • Type:off-axis: N-Type;
  • Primary flat Location:<1120>+/-5degree；
  • Epi-surface Inspection

  • surface pits (size > 0.2um):≦ 5000 ea

  • surface defect (size > 10um):≦ 1 ea/cm-2;

  • BPD counts:≦ 20 ea

  • Die yield (2*2mm, EE 5mm):≧ 95%;

  • Buffer Layer

  • Target Thickness (avg.):0.5um±10%;

  • Target Doping concentration (avg.):;1.0E18/cm3 ±10%;

  • Drift Layer

  • Target Thickness (avg.):10um ±6%;

  • Target Doping concentration (avg.):8.5E15/cm3 ±10%;

  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;