Silicon Carbide Substrate 4inch 6inch 4H Optical SiC Wafer

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 6inch;

• Poly tyep: 4H;

• Diameter: 150mm±0.2;

• Thickness: 500/700um±25;

• Surface Orientation on-axis: <0001>;

• Absorption <0.5%@450-650nm;

• Refractive index >2.65@589nm;

• Haze  <0.3%@visible;

• Surface orientation on-axis : <0001>;

• Surface orientation off-axis : 0°/1°/4°±0.5°;

• Micropipe density ：≤0.2 ea/cm2;

• Visible carbon density : None;
  

• LTV≤1.5μm(40mm*40mm);

• TTV≤2.5μm;

• Warp≤10μm;

• Bow≤-5μm~5μm;

• Surface Roughness: Ra≤0.5nm(10μm*10μm);

• Poly area: None;

• Notch orientation : <1-100>±1°;

• Notch depth : 1~1.25mm;

• Edge chips/indents/pinholes : None;

• Surface finish: Double Side CMP;

• Packing: Multi-wafer Cassette Or Single Wafer Container;

• Production time: 2~3weeks;