Silicon Carbide Substrate 3C/6H/ Dummy Grade SiC Wafer

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 2inch;

• Poly tyep: 3C;

• Diameter: 50mm±0.38;

• Thickness: 350um±25;

• Surface Orientation ,On axis:(111)0.5;

• Micropipe Density: 0 cm-2;

• Resistivity <0.8 m.cm;

• Primary Flat Orientation : {1-10}±0.5°;

• Primary Flat Length ：15.9mm1.7mm;

• Secondary Flat Orientation : Silicon face up: 90CW. from Prime flat 5.0;
  

• Secondary Flat Length : 8.0mm1.7 mm;

• TTV≤5μm;

• Warp≤15μm;

• Bow≤-30μm;

• Surface Roughness: CMPRa<0.2 nm;

• Edge Cracks: 1 allowed,1 mm;

• HexPlates: Cumulative areas3 %;

• Polytype Areas : Cumulative areas5%;

• Silicon Surface Scratches : 8 scratches to 1xwafer diametercumulative length;

• Edge Chips : 5 allowed, 1mm each;

• Silicon Surface Contamination : None;

• Edge Exclusion : 3mm;

• Surface finish: Double Side CMP;

• Packing: Multi-wafer Cassette Or Single Wafer Container;

• Production time: 4~5weeks;