InP Substrate 2inch N Type Indium Phosphide Semiconductor Wafer

♦️High-quality InP wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

Indium Phosphide (InP) Specification:

• Size: 2inch ;

• Diameter: 50.0mm±0.3 ;

• Dopant:N/InP-S;

• Orientation:(100)2°± 0.5° off toward<110>α =225° ;

• Thickness: 355um±15 ;

• Primary Orientation: [0-1-1]±0.05° ;

• Primary Flat Length: 16mm±2 ;

• Second Flat Orientation: [0-11] ±0.5° ;

• Second Flat Length: 7mm±1 ;

• Carrier Concentration:(3.0-4.0)E18 cm-3;

• Resistivity: N/A;

• Mobility: N/A;

• EPD: Ave＜200cm-2;

• TTV/TIR:≤10um ;

• BOW:≤10um ;

• Warp:≤15um ;

• Front side: Polished ;

• Backside: Etched;

• Packing: Wafer case ;

• Lead time:2~3weeks: