GaN on Sapphire wafer 4inch PG GaN Gallium nitride Semiconductor Substrate, showing two round wafers.
GaN on Sapphire wafer 4inch PG GaN Gallium nitride Semiconductor Substrate in packaging.

SOKA TECHNOLOGY

GaN on Silicon Substrate 6inch D Mode Gallium Nitride Wafer

$10,293.00
Quantity:6 pieces
Quantity:
♦️High-quality GaN wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
GaN on Si Specification:
  • GaN layer
  • Total defect : <1000  (Defect Siz ≥0.3um )  ;
  • AlGaN barrier : 30+/-20nm (Uniformity<10% )；
  • Total thickness  : 2700+/-500nm (Uniformity<10% ) ;

 

  • Silicon Substrate
  • Size: 6inch ;
  • Type : P ;
  • Orientation : 111；
  • Resistivity: 0.002 ohm-cm ; 
  • Thickness : 675um±15；
  • Backside Surface: Lapped and Acid Etched ；
  • Packing: Wafer case ;
  • Production time:6~8 weeks ;