GaN on Sapphire wafer 4inch PG GaN Gallium nitride Semiconductor Substrate

5♦️High-quality GaN wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

GaN on Sapphire Specification:

• Substrate:Sapphire ；

• Diameter: 100±0.5mm ;

• Orientation: C-plane 0.2±0.1° to M-plane;

• Thickness: 750±25um ;

• Orientation Flat:A-plane ±0.3° ;

• OF Length: 30±1mm；

• Front Side: Epi-ready Ra ≤0.5nm (typical)；

• Back Side: Epi-ready Ra ≤0.5nm (typical)；

• TTV: ≤10um；

• Bow：-10~10um；

• Warp: ≤ 15um ;

• Laser Mark: Yes；

• Epiwafer Structure

• Layer 2:N-GaN 2~3um;

• Layer 1:Buffer 2~3um;

• Layer 0: Substrate;

• Epitaxy Characteristics

• Total Epitaxy Thickness:5~6um;

• Thickness Std<3% ;

• XRD GaN (002): ≤100 arcsec;

• XRD GaN (102)≤100 arcsec ;

• Dislocation density :~ 1e7 cm-2;

• Conductivity:N-type;

• Resistivy:≤0.1 (ohm-cm);

• Surface Roughness:Ra ≤ 1.0 nm;

• Sori≤ 120 um;

The GaN crystal quality of this new GaN-on-Sapphire substrate and the GaN substrate are at a comparable level.

Currently, PQGaN is a high-quality single-layer GaN material that can be used as a substrate. Customers can extend the GaN structure on top of it.

Furthermore, we can also manufacture customer-specified GaN extension structures on PQGaN substrates on your behalf if needed.