GaN on Sapphire wafer 4inch P GaN Gallium nitride Semiconductor Substrate

♦️High-quality GaN wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

GaN on Sapphire Specification:

• Size: 2inch ;

• Mg-Doped;

• Diameter: 50.8 mm±0.3 mm ;

• Thickness/Thickness STD: 4.5 ± 0.5 μm / < 3% ;

• Orientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1°;

• Orientation Flat of GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;

• Conduction Type: P-Type;

• Resistivity (300K):< 10 Ω·cm;

• Carrier Concentration:> 1 x 1017 cm -3 (doping concentration of p+GaN ≥ 5 x 1019 cm -3);

• Mobility: > 5cm2/V·s ;

• Structure:~ 0.5 μm p+GaN/~ 1.5 μm p-GaN /~ 2.5 μm uGaN /~ 25 nm uGaN buffer/430 ±25 μm sapphire;

• XRD FWHMs: (0002)<300 arcsec,(10-12)<400 arcsec;

• Orientation of Sapphire: C plane (0001) off angle toward M-axis 0.2 ± 0.1°;

• Orientation Flat of Sapphire: (11-20) 0 ± 0.2°, 16 ± 1 mm ;

• Sapphire Polish: Single-side polished (SSP)/Double-side polished (DSP);

• UseableArea:> 90% (edge and macro defects exclusion);

• Wafer case ;