Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT

♦️High-quality SiC wafer for Research and Experiment.

♦️Provide small quantities, special specifications products, and customized services.

♦️Global shipping, secure payment, large inventory.

♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.

SiC Substrate Specification:

• Size: 6inch;
• Diameter: 150mm±0.25;
• Thickness: 350um±25;
• Surface Orientation: 4°toward[11-20]±5°;
• Primary Flat orientation:[11-20]±5°;
• Primary Flat Length:47.5mm±1.5;
• Secondary flat: None;
• Micropipe: ≤10/cm2;
• Resistivity: 0.015~0.028Ω;
• TTV≤10um;
• Warp≤55um;
• Bow≤45um;
• Surface Roughness: Si face Ra＜0.5 nm;
• Cracks: None;
• Roughness: None;
• Edge Chips: ≤2, the length and width of each ＜1mm;
• Surface finish: Double Side Polish, Si Face CMP;
• Packing: Multi-wafer Cassette Or Single Wafer Container;