Silicon wafer 6inch P Type(100) Oxide Layer 300nm Semiconductor Substrate - Soka Technology
Silicon wafer 4inch N Type 10~20Ω Oxide Layer Semiconductor Substrate - Soka Technology

Silicon wafer 6inch N Type(100) 0.001~0.005Ω Oxide Layer Semiconductor Substrate

$68.00
Specification:N(100) 625um Oxide Layer 300nm
Quantity:1 Piece
数量:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 6inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation: 100;
  • Resistivity: 0.001~0.005Ω·cm;
  • Thickness: 625um±25;
  • Oxide layer: 300nm (both sides);
  • TTV＜15um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case；
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 6inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation: 100;
  • Resistivity: 0.001~0.005Ω·cm;
  • Thickness: 600um±25/625um±25;
  • Oxide layer: 280/300/500nm (both sides);
  • TTV＜15um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case；