Silicon Wafer 4inch FZ 100 >1000Ω/>10000Ω Single Sided Polished Substrate
Type:P Type
Resistance:4inch >1000Ω
Quantity:1 Piece
数量:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: FZ;
-
Type: P-Type;
-
Orientation: 100;
-
Resistivity: >1000Ω・cm;
-
Thickness: 525um±25;
-
TTV<10um;
-
Front side: polished;
-
Backside: etched;
-
Packing: silicon wafer case;
选择方案
Type:P Type
Resistance:4inch >1000Ω
Quantity:1 Piece
数量:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: FZ;
-
Type: P-Type;
-
Orientation: 100;
-
Resistivity: >1000Ω・cm;
-
Thickness: 525um±25;
-
TTV<10um;
-
Front side: polished;
-
Backside: etched;
-
Packing: silicon wafer case;
Type:P Type
Resistance:4inch >1000Ω
Quantity:1 Piece
数量:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: FZ;
-
Type: P-Type;
-
Orientation: 100;
-
Resistivity: >1000Ω・cm;
-
Thickness: 525um±25;
-
TTV<10um;
-
Front side: polished;
-
Backside: etched;
-
Packing: silicon wafer case;
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
- Size: 4inch;
- Method: FZ;
- Type: N-Type or No dope;
- Orientation: 100;
- Resistivity: >1000Ω・cm;
- Thickness: 525um±25;
- TTV<10um;
- Front side: polished;
- Backside: etched;
- Packing: silicon wafer case;
