Silicon Nitride Thermal Conductive Si3N4 Heat Sink Ceramics Substrate
尺寸:114×114×0.32mm
Quantity:10
Quantity:
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Si3N4 Substrate Specification:
-
Size:114×114×0.32mm ;
-
Thermal conductivity (25 ℃): ≥80 W/(m•k);
-
Surface roughness:≤0.8Ra ;
-
Bulk density:3.20 ± 0.05 g/cm3 ;
-
Modulus of elasticity:300～320 Gpa ;
-
Poisson's ratio:≤0.29;
-
Vickers hardness:≥14.2 Gpa ;
-
Coefficient of thermal expansion(25 ℃ ~ 500 ℃):3.0～3.2(10-6/℃);
-
Fracture toughness:6.0～7.0 MPa;
-
Bending strength (three-point bending):700～800 MPa;
Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.
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尺寸:114×114×0.32mm
Quantity:10
Quantity:
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Si3N4 Substrate Specification:
-
Size:114×114×0.32mm ;
-
Thermal conductivity (25 ℃): ≥80 W/(m•k);
-
Surface roughness:≤0.8Ra ;
-
Bulk density:3.20 ± 0.05 g/cm3 ;
-
Modulus of elasticity:300～320 Gpa ;
-
Poisson's ratio:≤0.29;
-
Vickers hardness:≥14.2 Gpa ;
-
Coefficient of thermal expansion(25 ℃ ~ 500 ℃):3.0～3.2(10-6/℃);
-
Fracture toughness:6.0～7.0 MPa;
-
Bending strength (three-point bending):700～800 MPa;
Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.
尺寸:114×114×0.32mm
Quantity:10
Quantity:
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Si3N4 Substrate Specification:
-
Size:114×114×0.32mm ;
-
Thermal conductivity (25 ℃): ≥80 W/(m•k);
-
Surface roughness:≤0.8Ra ;
-
Bulk density:3.20 ± 0.05 g/cm3 ;
-
Modulus of elasticity:300～320 Gpa ;
-
Poisson's ratio:≤0.29;
-
Vickers hardness:≥14.2 Gpa ;
-
Coefficient of thermal expansion(25 ℃ ~ 500 ℃):3.0～3.2(10-6/℃);
-
Fracture toughness:6.0～7.0 MPa;
-
Bending strength (three-point bending):700～800 MPa;
Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Si3N4 Substrate Specification:
- Size: 114×114×0.32mm / 190×138×0.32mm ;
-
Thermal conductivity (25 ℃): ≥80 W/(m•k);
- Surface roughness: ≤0.8Ra ;
- Bulk density: 3.20 ± 0.05 g/cm3 ;
- Modulus of elasticity: 300～320 Gpa ;
- Poisson's ratio: ≤0.29;
- Vickers hardness: ≥14.2 Gpa ;
- Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0～3.2(10-6/℃);
- Fracture toughness: 6.0～7.0 MPa;
-
Bending strength (three-point bending): 700～800 MPa;
