Silicon wafer 4inch N Type 10~20Ω Oxide Layer Semiconductor Substrate - Soka Technology

Silicon wafer 4inch P/N Type 0.01~0.09Ω Oxide Layer Semiconductor Substrate

$50.00
Specification:P(100) 525um Oxide Layer 280nm
Quantity:1 Piece
数量:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.09Ω;
  • Thickness: 525um±25;
  • Oxide film: 280nm (both sides);
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
    ♦️High-quality silicon wafer for Research and Experiment.
    ♦️Provide small quantities, special specifications products, and customized services.
    ♦️Global shipping, secure payment, large inventory.
    ♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
    Silicon Wafer Specification:
    • Size: 4inch;
    • Method: CZ;
    • Type: N;
    • Dopant: Sb;
    • Orientation:100;
    • Resistivity: 0.01~0.09Ω;
    • Thickness: 525um±25;
    • Oxide film: 300nm (both sides);
    • TTV＜10um ;
    • Surface: polished;
    • Backside: etched;
    • Packing: silicon wafer case;