Three greenish-yellow spheres of varying sizes arranged in a triangular formation on a white background.
Silicon carbide substrate wafer placed in a clear containing, showcasing its high-quality finish for research applications.

Silicon Carbide Substrate 4inch 6inch Semi Insulating 4H NG Grade SiC Wafer IGBT

$1,034.00
Size:4inch
Quantity:5 Pieces
数量:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 4inch;
  • Diameter: 100.8 mm ±0.5;
  • Thickness: 500 um±25;
  • Surface Orientation: <0001>±0.2°;
  • Primary flat orientation:[11-20]±5°；
  • Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°；
  • Micropipe: N/A;
  • Resistivity: N/A;
  • TTV≤10um；
  • Warp≤45um；
  • Bow≤≤30um；
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;
The difference between NG grade and Dummy grade products mainly in the poly area on the surface.
NG grade poly area is more than 5%.
NG grade products are mainly used for equipment testing and have better cost performance.
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 4inch;
  • Diameter: 100.8 mm ±0.5;
  • Thickness: 500 um±25;
  • Surface Orientation: <0001>±0.2°;
  • Primary flat orientation:[11-20]±5°；
  • Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°；
  • Micropipe: N/A;
  • Resistivity: N/A;
  • TTV≤10um；
  • Warp≤45um；
  • Bow≤≤30um；
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;