Silicon wafer 4inch 6inch Copper Layer Semiconductor Substrate
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: CZ;
-
Type: P;
-
Dopant: B;
-
Orientation:100;
-
Resistivity: 0.001~0.009Ω;
-
Thickness: 525um±25;
-
TTV<10um ;
-
Surface: polished;
-
Backside: etched;
-
Copper film: 500nm (Ti50nm;Cu 500nm);
-
Packing: silicon wafer case;
オプションを選択
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: CZ;
-
Type: P;
-
Dopant: B;
-
Orientation:100;
-
Resistivity: 0.001~0.009Ω;
-
Thickness: 525um±25;
-
TTV<10um ;
-
Surface: polished;
-
Backside: etched;
-
Copper film: 500nm (Ti50nm;Cu 500nm);
-
Packing: silicon wafer case;
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
-
Size: 4inch;
-
Method: CZ;
-
Type: P;
-
Dopant: B;
-
Orientation:100;
-
Resistivity: 0.001~0.009Ω;
-
Thickness: 525um±25;
-
TTV<10um ;
-
Surface: polished;
-
Backside: etched;
-
Copper film: 500nm (Ti50nm;Cu 500nm);
-
Packing: silicon wafer case;
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
- Size: 4inch;
- Method: CZ;
- Type: P;
- Dopant: B;
- Orientation:100;
- Resistivity: 0.001~0.005Ω;
- Thickness: 525um±25;
- TTV<10um ;
- Surface: polished;
- Backside: etched;
- Copper film: 500nm (Ti50nm;Cu 500nm);
- Packing: silicon wafer case;
