Silicon Wafer 12inch P Type 1 - 100Ω Oxide Layer Semiconductor Substrate - Soka Technology
Silicon Wafer 12inch P Type 1 - 100Ω Oxide Layer Semiconductor Substrate - Soka Technology

Silicon Wafer 8inch P-type 1-100Ω Oxide Layer Semiconductor Substrate

$1,284.00
Specification:Oxide Layer 100nm
Quantity:25 Pieces
Quantité:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 8inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity:1～100Ω;
  • Thickness: 725um±25;
  • Oxide layer: 100nm±5% (both sides);
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 8inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 1~100Ω;
  • Thickness: 725um±25;
  • Oxide film: 100nm (both sides);
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case；