Silicon wafer 4inch P Type(100) SiN on SiO₂ Substrate in storage containers, showcasing high-quality materials.
Silicon wafer 4inch P Type(100) SiN on SiO₂ Substrate - High-quality research material.

Silicon wafer 4inch P Type(100) SiN on SiO₂ Substrate

$2,094.00
Quantity:25 Items
Specification:SiN on SiO₂
Quantité:
♦️ High-quality silicon wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation: 100;
  • Resistivity:1-10Ω・cm;
  • Thickness: 525um±25;
  • SIN layer: 300nm;
  • Oxide layer: 3um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case ;
     
    ♦️ High-quality silicon wafer for Research and Experiment.
    ♦️ Provide small quantities, special specifications products, and customized services.
    ♦️Global shipping, secure payment, large inventory.
    ♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
    Silicon Wafer Specification:
    • Size: 4inch;
    • Method: CZ;
    • Type: P;
    • Dopant: B;
    • Orientation: 100;
    • Resistivity: <0.0015Ω・cm;
    • Thickness: 525um±25;
    • SIN layer: 150nm/300nm (both sides);
    • TTV＜10um ;
    • Surface: polished;
    • Backside: etched;
    • Packing: silicon wafer case ;