Silicon Carbide Substrate 8inch 4H Semi-insulating Dummy Grade SiC Wafer IGBT
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 6inch;Poly tyep: 4H;
-
Diameter: 150mm±0.25;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<100arcsec;
-
Notch orientation: [1-100]±5°;
-
Notch Depth: 1~1.25mm;
-
Secondary flat: None;
-
Micropipe: ≤10ea/cm2;
-
Hexagonal void:None;
-
Resistivity: 70%>1E5Ω;
-
LTV≤10um(10*10mm);
-
TTV≤15um
-
Warp≤55um;
-
Bow≤-45~45mmum;
-
Surface Roughness: Si face Ra<0.2 nm(5*5mm);
-
Poly area: <30%(Cumulative area);
-
Scratches: NA;
-
Back defects: None;
-
Particels: NA;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
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♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 6inch;Poly tyep: 4H;
-
Diameter: 150mm±0.25;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<100arcsec;
-
Notch orientation: [1-100]±5°;
-
Notch Depth: 1~1.25mm;
-
Secondary flat: None;
-
Micropipe: ≤10ea/cm2;
-
Hexagonal void:None;
-
Resistivity: 70%>1E5Ω;
-
LTV≤10um(10*10mm);
-
TTV≤15um
-
Warp≤55um;
-
Bow≤-45~45mmum;
-
Surface Roughness: Si face Ra<0.2 nm(5*5mm);
-
Poly area: <30%(Cumulative area);
-
Scratches: NA;
-
Back defects: None;
-
Particels: NA;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 6inch;Poly tyep: 4H;
-
Diameter: 150mm±0.25;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<100arcsec;
-
Notch orientation: [1-100]±5°;
-
Notch Depth: 1~1.25mm;
-
Secondary flat: None;
-
Micropipe: ≤10ea/cm2;
-
Hexagonal void:None;
-
Resistivity: 70%>1E5Ω;
-
LTV≤10um(10*10mm);
-
TTV≤15um
-
Warp≤55um;
-
Bow≤-45~45mmum;
-
Surface Roughness: Si face Ra<0.2 nm(5*5mm);
-
Poly area: <30%(Cumulative area);
-
Scratches: NA;
-
Back defects: None;
-
Particels: NA;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
- Size: 8inch;
- Diameter: 200mm±0.2;
- Thickness: 500um±25;
- Surface Orientation: <0001>;
- Notch orientation:[1-100]±5°;
- Notch Depth:1~1.5mm;
- Micropipe: ≤50/cm2;
- Resistivity: 70% area>1E5Ω;
- LTV:<15um(10*10mm)
- TTV≤20um;
- Warp≤70um;
- Bow≤-65um~65um;
- Poly Type: <30% Cumulative ares;
- Cracks: None;
- Roughness: None;
- Edge: Chamfer;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
