Three greenish-yellow spheres of varying sizes arranged in a triangular formation on a white background.
Silicon carbide substrate wafer placed in a clear containing, showcasing its high-quality finish for research applications.

SiC Wafer 12inch Dummy Grade N Type 4H Silicon Carbide Substrate IGBT

$13,371.00
Size:12inch
Surface:Grinding
Quantity:1 Piece
Cantidad:
♦️High-quality SiC wafer for Research and Experiment.
♦️Global shipping, secure payment, large inventory.
♦️Production time 5~6 weeks. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 12inch;
  • Diameter: 300mm±0.5;
  • Thickness: 600um/700±100;
  • Surface Orientation: 4°toward[11-20]±1°;
  • Notch；
  • Micropipe: ≤ 5/cm2;
  • Resistivity: None;
  • TTV≤15um；
  • Surface Roughness: Si face Ra≤10 nm;
  • Edge chips: There is no chipping with a depth greater than 1mm;
  • Polytype Area by polarized light: Area≤30%;
  • Surface finish: C Face, Si Face Grinding;
  • Packing: Single Wafer Container;
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 12inch;
  • Diameter: 300mm±0.5;
  • Thickness: 600 um±100;
  • Surface Orientation: 4°toward[11-20]±1°;
  • Notch；
  • Micropipe: ≤ 5/cm2;
  • Resistivity: None;
  • TTV≤15um；
  • Surface Roughness: Si face Ra≤10 nm;
  • Edge chips: There is no chipping with a depth greater than 1mm;
  • Polytype Area by polarized light: Area≤30%;
  • Surface finish: C Face, Si Face Grinding;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;