Silicon Carbide Substrate 4inch 6inch Production/Dummy Grade 4H Semi-insulating SiC Wafer IGBT
Grade:P Grade
Size:4inch
Number Of Item:5Item
Menge:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 4inch;
-
Poly tyep: 4H;
-
Diameter: 99.5~100mm;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<45arcsec;
-
Primary flat orientation: [1-100]±5°;
-
Primary flat length: 32.5±1.5mm;
-
Secondary flat: None;
-
Micropipe: ≤1ea/cm2;
-
Hexagonal void：None;
-
Resistivity: ≥1E10ohm·cm;
-
LTV≤None;
-
TTV≤5um
-
Warp≤20um;
-
Bow≤-15μm~15μm;
-
Surface Roughness: Si face Ra＜0.2 nm(5*5mm);
-
Poly area: None;
-
Scratches: ≤2，Total Length≤Diameter;
-
Back defects: None;
-
Particels: ≤60（size≥0.3μm;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
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Grade:P Grade
Size:4inch
Number Of Item:5Item
Menge:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 4inch;
-
Poly tyep: 4H;
-
Diameter: 99.5~100mm;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<45arcsec;
-
Primary flat orientation: [1-100]±5°;
-
Primary flat length: 32.5±1.5mm;
-
Secondary flat: None;
-
Micropipe: ≤1ea/cm2;
-
Hexagonal void：None;
-
Resistivity: ≥1E10ohm·cm;
-
LTV≤None;
-
TTV≤5um
-
Warp≤20um;
-
Bow≤-15μm~15μm;
-
Surface Roughness: Si face Ra＜0.2 nm(5*5mm);
-
Poly area: None;
-
Scratches: ≤2，Total Length≤Diameter;
-
Back defects: None;
-
Particels: ≤60（size≥0.3μm;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
Grade:P Grade
Size:4inch
Number Of Item:5Item
Menge:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide thinning process, thickness from 100um.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
-
Size: 4inch;
-
Poly tyep: 4H;
-
Diameter: 99.5~100mm;
-
Thickness: 500um±25;
-
Surface Orientation on-axis: <0001>;
-
FWHM(0004):<45arcsec;
-
Primary flat orientation: [1-100]±5°;
-
Primary flat length: 32.5±1.5mm;
-
Secondary flat: None;
-
Micropipe: ≤1ea/cm2;
-
Hexagonal void：None;
-
Resistivity: ≥1E10ohm·cm;
-
LTV≤None;
-
TTV≤5um
-
Warp≤20um;
-
Bow≤-15μm~15μm;
-
Surface Roughness: Si face Ra＜0.2 nm(5*5mm);
-
Poly area: None;
-
Scratches: ≤2，Total Length≤Diameter;
-
Back defects: None;
-
Particels: ≤60（size≥0.3μm;
-
Surface finish: Double Side Polish, Si Face CMP;
-
Packing: Multi-wafer Cassette Or Single Wafer Container;
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
- Size: 6inch;
- Diameter: 150mm±0.25;
- Thickness: 350um±25;
- Surface Orientation: 4°toward[11-20]±5°;
- Primary Flat orientation:[11-20]±5°;
- Primary Flat Length:47.5mm±1.5;
- Secondary flat: None;
- Micropipe: ≤10/cm2;
- Resistivity: 0.015~0.028Ω;
- TTV≤10um;
- Warp≤55um;
- Bow≤45um;
- Surface Roughness: Si face Ra＜0.5 nm;
- Cracks: None;
- Roughness: None;
- Edge Chips: ≤2, the length and width of each ＜1mm;
- Surface finish: Double Side Polish, Si Face CMP;
- Packing: Multi-wafer Cassette Or Single Wafer Container;
