Silicon wafer 4inch P Type(100) SiN on SiO₂ Substrate - High-quality research material.
Silicon wafer 3inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate - Soka Technology

Silicon wafer 3inch P Type 0.001~0.009Ω Oxide Layer Semiconductor Substrate

$53.00
Specification:P(100) 525um Oxide Layer 100nm
Quantity:1 Piece
Menge:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 3inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.09Ω;
  • Thickness:525um±25;
  • Oxide layer: 100nm(both sides);
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 3inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.01~0.09Ω;
  • Thickness: 525um±25;
  • Oxide layer: 300nm(both sides);
  • TTV＜10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;